Tuning properties of SnO2/Au/SnO(2)multilayer with variable Au thicknesses as transparent conductive oxides
- Authors
- Park, Hyunwoo; Choi, Hyeongsu; Lee, Namgue; Jung, Chanwon; Choi, Yeonsik; Park, Suhyeon; Kim, Byunguk; Yuk, Hyunwoo; Choi, Yeongtae; Kim, Keunsik; Jeon, Hyeongtag
- Issue Date
- Oct-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Transparent conducting oxide; Atomic layer deposition; Tin Oxide
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.59, no.10, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 59
- Number
- 10
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1737
- DOI
- 10.35848/1347-4065/abb4a8
- ISSN
- 0021-4922
- Abstract
- Multilayer tin oxide/gold/tin oxide (SnO2/Au/SnO2) was deposited by atomic layer deposition and an e-beam evaporator. The structural, electrical, and optical properties of the SnO2/Au/SnO(2)multilayer were investigated. Au formed islands at a thickness less than 3 nm. As the Au interlayer thickness increased, the Au islands merged, resulting in a continuous film 12 nm thick. As the Au interlayer thickness increased from 0 to 12 nm, the carrier concentration and Hall mobility increased to 2.41 x 10(22) cm(-3)and 11.96 cm(2) V-1 s(-1), respectively. As a result, the resistivity decreased at 10(-5)ohm cm with an increasing Au interlayer thickness compared to a SnO(2)single layer. In addition, optical transmittance at 550 nm increased by more than 80% at 6 and 9 nm than at Au thicknesses of 3 and 12 nm. SnO2/Au/SnO(2)multilayers are promising candidates as an indium-free transparent conducting oxide for use in high performance optoelectronic devices.
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