Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD
DC Field | Value | Language |
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dc.contributor.author | Jeong, Seok-Goo | - |
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Choi, Wan-Ho | - |
dc.contributor.author | Kim, KyoungRok | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-07-30T04:52:18Z | - |
dc.date.available | 2021-07-30T04:52:18Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-10 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1738 | - |
dc.description.abstract | Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B). The electrical performance of B devices was higher than that of device A. The mobilities of A and B deviceswere 19.39 and 21.11 cm(2)/Vs, and the subthreshold slopes were 0.25 and 0.22 V/decade, respectively. In addition, the device reliability of A devices shows an abnormal threshold voltage (V-th) shift of -1.25 V under positive bias temperature stress (PBTS), caused by hydrogen diffusion from the gate insulator to the channel region near the source/drain electrode. However, B devices had a normal Vth shift of +2.87 V. X-ray photoelectron spectroscopy (XPS) and Fourier-transforminfrared spectroscopy (FT-IR) results showed that PECVD SiO2 has a large amount of hydrogen bonding, such as Si-OH, compared to PEALD SiO2. Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) measurement results confirmed that the hydrogen content of PECVD SiO2 was 2.24%, whereas that of PEALD SiO2 was lower at 1.45%. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1109/TED.2020.3017145 | - |
dc.identifier.scopusid | 2-s2.0-85092193222 | - |
dc.identifier.wosid | 000572635400051 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.10, pp.4250 - 4255 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 67 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 4250 | - |
dc.citation.endPage | 4255 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | plasma-enhanced atomic layer deposition (PEALD) | - |
dc.subject.keywordAuthor | subchannel formation by hydrogen diffusion | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9179008 | - |
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