Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film
DC Field | Value | Language |
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dc.contributor.author | Kwak, June Sik | - |
dc.contributor.author | Do, Young Ho | - |
dc.contributor.author | Bae, Yoon Cheol | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-12-20T15:48:54Z | - |
dc.date.available | 2022-12-20T15:48:54Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-09 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174146 | - |
dc.description.abstract | Pt/CoOx/Pt tri-layers exhibited reproducible and stable unipolar switching under a dc sweeping voltage. In order to investigate the role of oxygen reduction in the metal-deficient CoOx layer, resistive switching of the post-annealed CoOx thin film was compared with those of the as-deposited CoO thin film. X-ray photoemission spectroscopy showed larger reproducible resistance switching and decreasing of current level in the post-annealed CoO thin film. This may be explained by a reduction in oxygen stoichiometry without phase transformation of the CoOx. In addition, stable switching in post-annealed CoOx layer is considered to originate from the decrease of the Co vacancies in local Co3O4 region partially distributed in the whole CoOx layer, not in the dominant CoO. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1016/j.tsf.2010.03.050 | - |
dc.identifier.scopusid | 2-s2.0-77956062166 | - |
dc.identifier.wosid | 000282242600065 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.518, no.22, pp.6437 - 6440 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 518 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 6437 | - |
dc.citation.endPage | 6440 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | CoOx | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609010003548?via%3Dihub | - |
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