UV-enhanced atomic layer deposition of ZrO2 thin films at room temperature
- Authors
- Lee, Byoung H.; Cho, Sangho; Hwang, Jae K.; Kim, Su H.; Sung, Myung M.
- Issue Date
- Sep-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Atomic layer deposition; ZrO2; Self-limiting reaction; UV-ALD; PET
- Citation
- THIN SOLID FILMS, v.518, no.22, pp.6432 - 6436
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 22
- Start Page
- 6432
- End Page
- 6436
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174147
- DOI
- 10.1016/j.tsf.2010.03.059
- ISSN
- 0040-6090
- Abstract
- A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit ZrO2 thin films on poly (ethylene terephthalate) (PET) polymer substrates using zirconium tetra-tert-butoxide (ZTB) and H2O as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield uniform, conformal, and pure ZrO2 thin films on polymer substrates at room temperature. The UV light was very effective to obtain the high-quality ZrO2 thin films with good adhesive strength on polymer substrates. The ZrO2 thin films exhibit large-scale uniformity, sharp interfaces, and unique electrical properties.
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