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Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

Authors
Song, JaehoonInamdar, Akbar I.Jang, ByeongUkJeon, KiyoungKim, YoungSamJung, KyoohoKim, YongminIm, HyunsikJung, WoongKim, HyungsangHong, J. P.
Issue Date
Aug-2010
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
APPLIED PHYSICS EXPRESS, v.3, no.9, pp.1 - 3
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS EXPRESS
Volume
3
Number
9
Start Page
1
End Page
3
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174334
DOI
10.1143/APEX.3.091101
ISSN
1882-0778
Abstract
We prepared resistive switching Al-AlOx multilayered junctions and observed considerably improved endurance properties. The mechanism of the observed resistance switching basically reflects the filament model. The temperature dependence of the transport in each resistance state revealed additional features, that is a well-defined thermal activation behavior in the high-resistance state is not observed in the layered device and the metallic conduction in the low-resistance state is not affected. The improved endurance properties are discussed in terms of the increased effective number of active regions, where the Reset and Set processes probably occur before a permanent dielectric breakdown.
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