Density of trap states measured by photon probe into ZnO based thin-film transistors
- Authors
- Lee, Kimoon; Ko, Gunwoo; Lee, Gun Hwan; Han, Gi Bok; Sung, Myung M.; Ha, Tae Woo; Kim, Jae Hoon; Im, Seongil
- Issue Date
- Aug-2010
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.8, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 8
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174395
- DOI
- 10.1063/1.3483763
- ISSN
- 0003-6951
- Abstract
- We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities.
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