Tunnel Magnetoresistance of an As-deposited Co2FeAl0.5Si0.5-based Magnetic Tunnel Junction on a Ta/Ru Buffer Layer
- Authors
- Hwang, Jae Youn; Lee, Gae Hun; Song, Yun Heub; Yim, Hae In
- Issue Date
- Jul-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Co2FeAl0.5Si0.5; Heusler alloy; Magnetic tunnel junction; Metal buffer layer
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.1, pp.160 - 163
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 57
- Number
- 1
- Start Page
- 160
- End Page
- 163
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174482
- DOI
- 10.3938/jkps.57.160
- ISSN
- 0374-4884
- Abstract
- A magnetic tunnel junction (MTJ) with a Co2FeAl0.5Si0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 degrees C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlOx/CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.
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