A New Ni-Zn under bump metallurgy for Pb-free solder bump flip chip application
- Authors
- Cho, Hae-Young; Kim, Tae-Jin; Kim, Young Min; Kim, Sun-Chul; Park, Jin-Young; Kim, Young Ho
- Issue Date
- Jun-2010
- Publisher
- IEEE
- Citation
- Proceedings - Electronic Components and Technology Conference, pp.151 - 155
- Indexed
- SCOPUS
- Journal Title
- Proceedings - Electronic Components and Technology Conference
- Start Page
- 151
- End Page
- 155
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174808
- DOI
- 10.1109/ECTC.2010.5490894
- ISSN
- 0569-5503
- Abstract
- We developed an Au/Ni-Zn/Ti under bump metallurgy (UBM) for Pb-free solders. Au/Ni-Zn/Ti and Au/Ni/Ti UBM stacks were deposited on SiO 2/Si wafer using conventional magnetron sputtering and Sn solder was electroplated on UBM stacks. Then, Sn solder on UBM were reflowed at 260°C for 15 s and aged at 150°C up to 1000 h. The measurement of film stress using a curvature method showed Ni-Zn films having the very low tensile stress could be obtained by controlling the Ar pressure. Ni3Sn4 intermetallic compound (IMC) was formed on both Ni-Zn UBM and Ni UBM after reflow and IMC thickness increased with aging time. Other IMCs besides Ni 3Sn4 were not observed after aging. IMC growth of Ni-Zn UBM was slower than that of Ni. UBM consumption rate of Ni-Zn UBM was also lower than that of Ni UBM. These beneficial results were ascribed to the effect of Zn, which played a role of interdiffusion barrier between Sn and Ni. Our results revealed that Ni-Zn layer is a promising UBM for Pb free solders.
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