Electrical Characteristics of TiSi2 Nanocrystal Nonvolatile Memory with Barrier-Engineered Tunnel Layer
DC Field | Value | Language |
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dc.contributor.author | Han, Seung Jong | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Seo, Ki Bong | - |
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Oh, Jun-Seok | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-12-20T17:26:13Z | - |
dc.date.available | 2022-12-20T17:26:13Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174842 | - |
dc.description.abstract | In this study, we fabricated TiSi2 nanocrystal nonvolatile memory devices with silicon nitride-oxide-nitride (NON) and SiO2 tunnel barriers. The TiSi2 nanocrystals with diameters of 2-5nm and a density of 1.5 x 10(12) cm(-2) were formed using radio frequency magnetron sputtering in argon and a postannealing process. The memory effect of the TiSi2 nanocrystal memory device with the NON tunnel barrier was observed at about 0.7 V at 100 ms when the applied program/erase voltages were + 7V/-7V. Also, the memory window of the NON tunnel barrier device was maintained up to 1.3 V after 10(3)s. These results indicate that the NON tunnel barrier provides an effective tunneling thickness for the fast program/erase speeds and an adequate physical thickness for long charge retention characteristics in nonvolatile memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Electrical Characteristics of TiSi2 Nanocrystal Nonvolatile Memory with Barrier-Engineered Tunnel Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1143/JJAP.49.06GG14 | - |
dc.identifier.scopusid | 2-s2.0-77955313006 | - |
dc.identifier.wosid | 000278966300043 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.6, pp.1 - 4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Argon | - |
dc.subject.keywordPlus | Nonvolatile storage | - |
dc.subject.keywordPlus | Semiconductor storage | - |
dc.subject.keywordPlus | Silicon nitride | - |
dc.subject.keywordPlus | Silicon oxides | - |
dc.subject.keywordPlus | Titanium compounds | - |
dc.subject.keywordPlus | A-density | - |
dc.subject.keywordPlus | Charge retention characteristic | - |
dc.subject.keywordPlus | Electrical characteristic | - |
dc.subject.keywordPlus | Memory effects | - |
dc.subject.keywordPlus | Memory window | - |
dc.subject.keywordPlus | Nanocrystal memory devices | - |
dc.subject.keywordPlus | Nanocrystal nonvolatile memories | - |
dc.subject.keywordPlus | Nonvolatile memory devices | - |
dc.subject.keywordPlus | Physical thickness | - |
dc.subject.keywordPlus | Postannealing process | - |
dc.subject.keywordPlus | Program/erase | - |
dc.subject.keywordPlus | Radio frequency magnetron sputtering | - |
dc.subject.keywordPlus | Tunnel barrier | - |
dc.subject.keywordPlus | Nanocrystals | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.06GG14 | - |
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