Electrical Characteristics of TiSi2 Nanocrystal Nonvolatile Memory with Barrier-Engineered Tunnel Layer
- Authors
- Han, Seung Jong; Lee, Dong Uk; Seo, Ki Bong; Kim, Seon Pil; Kim, Eun Kyu; Oh, Jun-Seok; Cho, Won-Ju
- Issue Date
- Jun-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.6, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 49
- Number
- 6
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174842
- DOI
- 10.1143/JJAP.49.06GG14
- ISSN
- 0021-4922
- Abstract
- In this study, we fabricated TiSi2 nanocrystal nonvolatile memory devices with silicon nitride-oxide-nitride (NON) and SiO2 tunnel barriers. The TiSi2 nanocrystals with diameters of 2-5nm and a density of 1.5 x 10(12) cm(-2) were formed using radio frequency magnetron sputtering in argon and a postannealing process. The memory effect of the TiSi2 nanocrystal memory device with the NON tunnel barrier was observed at about 0.7 V at 100 ms when the applied program/erase voltages were + 7V/-7V. Also, the memory window of the NON tunnel barrier device was maintained up to 1.3 V after 10(3)s. These results indicate that the NON tunnel barrier provides an effective tunneling thickness for the fast program/erase speeds and an adequate physical thickness for long charge retention characteristics in nonvolatile memory devices.
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