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Universal Relationship between PECVD SiO2 Gate Insulator Film Properties and a-ITZO TFT Characteristics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2022-12-20T17:31:02Z | - |
| dc.date.available | 2022-12-20T17:31:02Z | - |
| dc.date.issued | 20220125 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/174894 | - |
| dc.title | Universal Relationship between PECVD SiO2 Gate Insulator Film Properties and a-ITZO TFT Characteristics | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제29회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 강원도 하이원 그랜드호텔 | - |
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Related Researcher
- OH, SAE ROON TER
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)