Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Kang, Ki Man | - |
dc.contributor.author | Park, Min Joo | - |
dc.contributor.author | Kwak, Joon Seop | - |
dc.contributor.author | Kim, Hyun Soo | - |
dc.contributor.author | Kwon, Kwang Woo | - |
dc.contributor.author | Kim, Young Ho | - |
dc.date.accessioned | 2022-12-20T17:55:40Z | - |
dc.date.available | 2022-12-20T17:55:40Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.issn | 1738-8228 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175009 | - |
dc.description.abstract | We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3 x 10(-2) Omega-cm(2) after annealing at 300 degrees C, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1x10(5) Omega-cm(2) after annealing at 500 degrees C for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2x10(-4) Omega-cm(2) after annealing at 300 degrees C. These results suggest that both the Ga-face n-GaN and N-face n-GaN. | - |
dc.language | 한국어 | - |
dc.language.iso | ko | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Ho | - |
dc.identifier.doi | 10.3365/KJMM.2010.48.05.456 | - |
dc.identifier.scopusid | 2-s2.0-77953533257 | - |
dc.identifier.wosid | 000278244200012 | - |
dc.identifier.bibliographicCitation | KOREAN JOURNAL OF METALS AND MATERIALS, v.48, no.5, pp.456 - 461 | - |
dc.relation.isPartOf | KOREAN JOURNAL OF METALS AND MATERIALS | - |
dc.citation.title | KOREAN JOURNAL OF METALS AND MATERIALS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 456 | - |
dc.citation.endPage | 461 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001445536 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordAuthor | semiconductors | - |
dc.subject.keywordAuthor | sputtering | - |
dc.subject.keywordAuthor | electrical properties electrical | - |
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