Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes
- Authors
- Kang, Ki Man; Park, Min Joo; Kwak, Joon Seop; Kim, Hyun Soo; Kwon, Kwang Woo; Kim, Young Ho
- Issue Date
- May-2010
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- semiconductors; sputtering; electrical properties electrical
- Citation
- KOREAN JOURNAL OF METALS AND MATERIALS, v.48, no.5, pp.456 - 461
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- KOREAN JOURNAL OF METALS AND MATERIALS
- Volume
- 48
- Number
- 5
- Start Page
- 456
- End Page
- 461
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175009
- DOI
- 10.3365/KJMM.2010.48.05.456
- ISSN
- 1738-8228
- Abstract
- We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3 x 10(-2) Omega-cm(2) after annealing at 300 degrees C, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1x10(5) Omega-cm(2) after annealing at 500 degrees C for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2x10(-4) Omega-cm(2) after annealing at 300 degrees C. These results suggest that both the Ga-face n-GaN and N-face n-GaN.
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