Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Do, Young Ho | - |
dc.contributor.author | Kwak, June Sik | - |
dc.contributor.author | Bae, Yoon Cheol | - |
dc.contributor.author | Jung, Kyooho | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-12-20T18:03:54Z | - |
dc.date.available | 2022-12-20T18:03:54Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175071 | - |
dc.description.abstract | The rutile TiO2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO2/Pt and Al/TiO2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlOx layer due to redox reaction at Al-TiO2 layer interfaces. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1016/j.tsf.2010.01.016 | - |
dc.identifier.scopusid | 2-s2.0-77953126797 | - |
dc.identifier.wosid | 000278242000061 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.518, no.15, pp.4408 - 4411 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 518 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 4408 | - |
dc.citation.endPage | 4411 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MEMORY APPLICATIONS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Redox reaction | - |
dc.subject.keywordAuthor | Titanium dioxide | - |
dc.subject.keywordAuthor | Electrode interface | - |
dc.subject.keywordAuthor | Auger electron spectroscopy | - |
dc.subject.keywordAuthor | Current-Voltage Measurements | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609010000556?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.