Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
DC Field | Value | Language |
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dc.contributor.author | Song, Hooyoung | - |
dc.contributor.author | Kim, Jin Soak | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Seo, Yong Gon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.date.accessioned | 2022-12-20T18:18:40Z | - |
dc.date.available | 2022-12-20T18:18:40Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175197 | - |
dc.description.abstract | The potential of nonpolar a-plane InGaN/GaN multi-quantum wells (MQWs), which are free from a strong piezoelectric field, was demonstrated. An a-GaN template grown on an r-plane sapphire substrate by the multi-buffer layer technique showed high structural quality with an omega full width at half maximum value along the c-axis of 418 arcsec obtained from high-resolution x-ray diffraction analysis. From barrier analysis by deep level transient spectroscopy, it appeared that a-plane InGaN/GaN MQWs can solve the efficiency droop problem as they have a lower electron capture barrier than the c-plane sample. The peak shift of the temperature-dependent photoluminescence signal for the nonpolar InGaN/GaN MQWs was well fitted by Varshni's empirical equation with zero-internal fields. A high photoluminescence efficiency of 0.27 from this sample also showed that nonpolar MQWs can be the key factor to solve the efficiency limitation in conventional c-plane GaN based light emitting diodes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1088/0957-4484/21/13/134026 | - |
dc.identifier.scopusid | 2-s2.0-77949343561 | - |
dc.identifier.wosid | 000275242200027 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.21, no.13, pp.1 - 6 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 21 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LEVEL TRANSIENT SPECTROSCOPY | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | FILMS | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0957-4484/21/13/134026 | - |
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