Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
- Authors
- Song, Hooyoung; Kim, Jin Soak; Kim, Eun Kyu; Seo, Yong Gon; Hwang, Sung-Min
- Issue Date
- Apr-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.21, no.13, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 21
- Number
- 13
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175197
- DOI
- 10.1088/0957-4484/21/13/134026
- ISSN
- 0957-4484
- Abstract
- The potential of nonpolar a-plane InGaN/GaN multi-quantum wells (MQWs), which are free from a strong piezoelectric field, was demonstrated. An a-GaN template grown on an r-plane sapphire substrate by the multi-buffer layer technique showed high structural quality with an omega full width at half maximum value along the c-axis of 418 arcsec obtained from high-resolution x-ray diffraction analysis. From barrier analysis by deep level transient spectroscopy, it appeared that a-plane InGaN/GaN MQWs can solve the efficiency droop problem as they have a lower electron capture barrier than the c-plane sample. The peak shift of the temperature-dependent photoluminescence signal for the nonpolar InGaN/GaN MQWs was well fitted by Varshni's empirical equation with zero-internal fields. A high photoluminescence efficiency of 0.27 from this sample also showed that nonpolar MQWs can be the key factor to solve the efficiency limitation in conventional c-plane GaN based light emitting diodes.
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