Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer
DC Field | Value | Language |
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dc.contributor.author | Park, C.H. | - |
dc.contributor.author | Lee, K.H. | - |
dc.contributor.author | Lee, B.H. | - |
dc.contributor.author | Sung, Myung M. | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2022-12-20T18:39:50Z | - |
dc.date.available | 2022-12-20T18:39:50Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175291 | - |
dc.description.abstract | We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung M. | - |
dc.identifier.doi | 10.1109/INEC.2010.5424966 | - |
dc.identifier.scopusid | 2-s2.0-77951662818 | - |
dc.identifier.bibliographicCitation | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp.1185 - 1186 | - |
dc.relation.isPartOf | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings | - |
dc.citation.title | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings | - |
dc.citation.startPage | 1185 | - |
dc.citation.endPage | 1186 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Current ratios | - |
dc.subject.keywordPlus | Ferroelectric layers | - |
dc.subject.keywordPlus | Glass substrates | - |
dc.subject.keywordPlus | High field effect mobility | - |
dc.subject.keywordPlus | Low voltages | - |
dc.subject.keywordPlus | Memory window | - |
dc.subject.keywordPlus | Non-volatile memories | - |
dc.subject.keywordPlus | Retention properties | - |
dc.subject.keywordPlus | Thin buffer | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Buffer layers | - |
dc.subject.keywordPlus | Epitaxial layers | - |
dc.subject.keywordPlus | Ferroelectricity | - |
dc.subject.keywordPlus | Nanoelectronics | - |
dc.subject.keywordPlus | Optical waveguides | - |
dc.subject.keywordPlus | Semiconducting organic compounds | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5424966 | - |
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