Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer
- Authors
- Park, C.H.; Lee, K.H.; Lee, B.H.; Sung, Myung M.; Im, Seongil
- Issue Date
- Mar-2010
- Publisher
- IEEE
- Citation
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp.1185 - 1186
- Indexed
- SCOPUS
- Journal Title
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
- Start Page
- 1185
- End Page
- 1186
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175291
- DOI
- 10.1109/INEC.2010.5424966
- ISSN
- 0000-0000
- Abstract
- We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102.
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