Structural effect of LaAlO3/SrTiO3 interface on electronic properties: Ab-initio calculations
- Authors
- Park, Hayan; Park, Hong-Lae; Chung, Yong-Chae
- Issue Date
- Mar-2010
- Publisher
- IEEE
- Citation
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp.1254 - 1255
- Indexed
- SCOPUS
- Journal Title
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
- Start Page
- 1254
- End Page
- 1255
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175292
- DOI
- 10.1109/INEC.2010.5424924
- ISSN
- 0000-0000
- Abstract
- The structural aspects of LaAlO3/SrTiO3 heterostructure were investigated in detail to explain the electronic properties of interface. Cell volume change, atomic displacements were calculated for the (1x1) LaAlO3(m unit cells, m=3, 5)/SrTiO3 (4 unit cells) system using ab-initio method. Both of LaAlO3 and SrTiO3 cells were stretched in longitudinal directions. The oxygen atoms in the cells moved to n-type interface and the movement, consequently, could be interred to contribute the conductivity of n-type interface.
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