Formation of Cu or Cu2O nanoparticles embedded in a polyimide film for nanofloating gate memory

Abstract

A Cu nanoparticles/polyimide (PI) or Cu2O nanoparticles/PI hybrid materials were fabricated by curing at 350°C for 2 hours in H 2 or N2 atmosphere respectively, which resulted from the decomposition of the complex formed between a Cu film and the PI precursor, polyamic acid (PAA). Two kinds of PI films, thermosetting PI and thermoplastic PI were used. The A1 was deposited on the top PI as the top electrode and In as the bottom electrode was soldered on the back side of the samples. The memory effect of A1/PI/Cu (or Cu2O) nanoparticles/PI/p-type Si (100) structure will be also discussed with the results of the capacitance-voltage (C-V) measured at room temperature.