Transparent thin film transistors based on parallel array of si nanowires
- Authors
- Lee, Dong Hyun; Choung, Jae Woong; Pyun, Yong Bum; Son, Kwangsoo; Park, Won Il
- Issue Date
- Mar-2010
- Publisher
- IEEE
- Citation
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp.1282 - 1283
- Indexed
- SCOPUS
- Journal Title
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
- Start Page
- 1282
- End Page
- 1283
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175294
- DOI
- 10.1109/INEC.2010.5424905
- ISSN
- 0000-0000
- Abstract
- We report on the fabrication of fully transparent thin-film transistors (T-TFTs) by implementing the aligned silicon nanowires (SiNWs) and Ga-doped ZnO thin films as transparent channels and transparent conducting electrodes, respectively. The SiNWs aligned on the glass substrates are highly transparent in the visible spectral range, with a transmittance of ∼90 % for the NW density of ∼2-3 μm-1. In addition, polarization-dependent measurements reveal the variation of transmittance in the range of 75-95 % with respect to the angle between polarization of incident light and the NW axis. Gate dependent transport measurements demonstrated that the boron-doped SiNW devices behaved as p-type TFTs with good characteristics in terms of transconductance and switching behavior.
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