Transparent thin film transistors based on parallel array of si nanowires

Abstract

We report on the fabrication of fully transparent thin-film transistors (T-TFTs) by implementing the aligned silicon nanowires (SiNWs) and Ga-doped ZnO thin films as transparent channels and transparent conducting electrodes, respectively. The SiNWs aligned on the glass substrates are highly transparent in the visible spectral range, with a transmittance of ∼90 % for the NW density of ∼2-3 μm-1. In addition, polarization-dependent measurements reveal the variation of transmittance in the range of 75-95 % with respect to the angle between polarization of incident light and the NW axis. Gate dependent transport measurements demonstrated that the boron-doped SiNW devices behaved as p-type TFTs with good characteristics in terms of transconductance and switching behavior.