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Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Tae-Wook | - |
| dc.contributor.author | Choi, Byong-Deok | - |
| dc.date.accessioned | 2022-12-20T18:42:39Z | - |
| dc.date.available | 2022-12-20T18:42:39Z | - |
| dc.date.issued | 2010-03 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.issn | 1347-4065 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175314 | - |
| dc.description.abstract | This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1 : 3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 mu m, which is almost one-half of that of the previous 6-bit resistor-string-based DAC. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IOP Publishing Ltd | - |
| dc.title | Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1143/JJAP.49.03CD03 | - |
| dc.identifier.scopusid | 2-s2.0-77952574590 | - |
| dc.identifier.wosid | 000276386500021 | - |
| dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.49, no.3, pp 1 - 6 | - |
| dc.citation.title | Japanese Journal of Applied Physics | - |
| dc.citation.volume | 49 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 6 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | CONVERTER | - |
| dc.subject.keywordPlus | DAC | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.03CD03 | - |
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