Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition
- Authors
- Jeong, Wooho; Ko, Youngbin; Bang, Seokhwan; Lee, Seungjun; Jeon, Hyeongtag
- Issue Date
- Mar-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ALD; HfN; Diffusion barrier
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.3, pp.905 - 910
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 56
- Number
- 3
- Start Page
- 905
- End Page
- 910
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175335
- DOI
- 10.3938/jkps.56.905
- ISSN
- 0374-4884
- Abstract
- HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD) with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH(3))(2)](4)} as a Hf precursor and a N(2) plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250 degrees C The optimized process temperature, plasma power, and pressure were 250 degrees C, 300 W, and I Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700 degrees C for 10 min. HfN films deposited on contact holes (0.12-mu m wide and 1.8-mu m deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures, and the formation of a copper silicide phase was observed after annealing at 650 degrees C.
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