Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Wooho | - |
dc.contributor.author | Ko, Youngbin | - |
dc.contributor.author | Bang, Seokhwan | - |
dc.contributor.author | Lee, Seungjun | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-20T18:44:46Z | - |
dc.date.available | 2022-12-20T18:44:46Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175335 | - |
dc.description.abstract | HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD) with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH(3))(2)](4)} as a Hf precursor and a N(2) plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250 degrees C The optimized process temperature, plasma power, and pressure were 250 degrees C, 300 W, and I Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700 degrees C for 10 min. HfN films deposited on contact holes (0.12-mu m wide and 1.8-mu m deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures, and the formation of a copper silicide phase was observed after annealing at 650 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.3938/jkps.56.905 | - |
dc.identifier.scopusid | 2-s2.0-77954838452 | - |
dc.identifier.wosid | 000275624200039 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.3, pp.905 - 910 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 56 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 905 | - |
dc.citation.endPage | 910 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001428981 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TANX FILMS | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | TICL4-NH3-H-2 | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | HfN | - |
dc.subject.keywordAuthor | Diffusion barrier | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=56&number=3&spage=905&year=2010 | - |
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