Effects of the Gate Dielectric on the Subthreshold Transport of Carbon Nanotube Network Transistors Grown by Using Plasma-enhanced Chemical Vapor Deposition
DC Field | Value | Language |
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dc.contributor.author | Jeong, Seung Geun | - |
dc.contributor.author | Park, Wanjun | - |
dc.date.accessioned | 2022-12-20T19:08:10Z | - |
dc.date.available | 2022-12-20T19:08:10Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175484 | - |
dc.description.abstract | In this study, we investigated the subthreshold slope of random network carbon nanotube transisters with different geometries and passivations. Single-wall carbon nanotubes with lengths of 1-2 in were grown by using plasma-enhanced chemical vapor deposition to form the transistor channels. A critical channel length, where the subthreshold slope was saturated. of 7 pm was obtained. This was due to the percolational behavior of the nanotube random networks. With the dielectric passivation, the subthreshold slope was dramatically reduced from 9 V/decade to 0.9 V/decade by reducing interfacial trap sites, which then reduced the interface capacitance between the nanotube network and the gate dielectric. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effects of the Gate Dielectric on the Subthreshold Transport of Carbon Nanotube Network Transistors Grown by Using Plasma-enhanced Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Wanjun | - |
dc.identifier.doi | 10.3938/jkps.56.598 | - |
dc.identifier.scopusid | 2-s2.0-77954842479 | - |
dc.identifier.wosid | 000274807100014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.2, pp.598 - 601 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 56 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 598 | - |
dc.citation.endPage | 601 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001428885 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordAuthor | Carbon Nanotube | - |
dc.subject.keywordAuthor | Network | - |
dc.subject.keywordAuthor | Transistor | - |
dc.subject.keywordAuthor | Percolation | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordAuthor | Dielectric | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=56&number=2&spage=598&year=2010 | - |
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