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A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory
- Issue Date
- Feb-2010
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- NAND; FLASH; row decoder; high voltage switch; low voltage; area scaling; low power
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E93C, no.2, pp.182 - 186
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E93C
- Number
- 2
- Start Page
- 182
- End Page
- 186
- ISSN
- 0916-8524
- Abstract
- A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)