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Magnetism in ZnO films with Mn and Co due to hydrogen plasma irradiation
- Authors
- Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu
- Issue Date
- Jan-2010
- Publisher
- AIP Publishing
- Keywords
- Diluted magnetic semiconductor; ZnMnO; ZnO
- Citation
- AIP Conference Proceedings, v.1199, pp.445 - 446
- Indexed
- SCOPUS
- Journal Title
- AIP Conference Proceedings
- Volume
- 1199
- Start Page
- 445
- End Page
- 446
- ISSN
- 0094-243X
- Abstract
- High quality ZnO and magnetic element doped (Zn, Mn)O and (Zn, Co)O films were made by using a pulsed laser deposition (PLD) system. The results of X-ray diffraction measurements showed a single crystal of wurtzite structure. The ZnMnO film had electrical properties of an n-type semiconductor with carrier concentration of 5×1018 cm-3, while the ZnCoO films showed high conductance. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and Ec-0.13 eV, respectively.
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