Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Hee-Sub | - |
dc.contributor.author | Park, Jin-Hyung | - |
dc.contributor.author | Yi, Sok-Ho | - |
dc.contributor.author | Paik, Ungyu | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-12-20T19:16:29Z | - |
dc.date.available | 2022-12-20T19:16:29Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175561 | - |
dc.description.abstract | The effect of an organic additive on the surface roughness of a polycrystalline silicon (poly-Si) film was investigated by chemical mechanical polishing (CMP). The surface roughness of the polished poly-Si film was markedly reduced by adding 0.001 wt% hydroxyl ethyl cellulose (HEC) and then decreased slightly with further addition of HEC. We concluded that the reduction of surface roughness was attributed to the formation of a hydroplane layer on the poly-Si surface. Evidence of the hydroplane layer was verified by contact angle and X-ray photoelectron spectroscopy (XPS) measurements. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Paik, Ungyu | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1143/JJAP.49.010216 | - |
dc.identifier.scopusid | 2-s2.0-77950837733 | - |
dc.identifier.wosid | 000275607900016 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.1, pp.1 - 3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | REMOVAL SELECTIVITY | - |
dc.subject.keywordPlus | SLURRY | - |
dc.subject.keywordPlus | PLANARIZATION | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.010216 | - |
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