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Spin-Polarized Transport Phenomena in Double Magnetic Tunnel Junctions Caused by Ferromagnetic CoFe Nanoparticles

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dc.contributor.authorYoon, Kapsoo-
dc.contributor.authorKim, Kiwoong-
dc.contributor.authorKoo, Jahyun-
dc.contributor.authorYang, Jungyup-
dc.contributor.authorDo, YoungHo-
dc.contributor.authorKwak, Junesik-
dc.contributor.authorHong, Jinpyo-
dc.date.accessioned2022-12-20T19:17:04Z-
dc.date.available2022-12-20T19:17:04Z-
dc.date.issued2010-01-
dc.identifier.issn0018-9464-
dc.identifier.issn1941-0069-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175565-
dc.description.abstractWe present some unusual spin-polarized transport phenomena in asymmetric double barrier magnetic tunneling junctions (ADBMTJs) with CoFe/AlOx/ferromagnetic nanoparticle (FM-NPs)/AlOx/Ta structures. The conductance curves and the magnetoresistance ratio clearly oscillate with applied bias voltage, indicating the presence of Coulomb blockade effects due to isolated ferromagnetic nanoparticles in the parallel configuration in the ADBMTJ. The oscillation period is about 1.5 mV at 2 K.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleSpin-Polarized Transport Phenomena in Double Magnetic Tunnel Junctions Caused by Ferromagnetic CoFe Nanoparticles-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TMAG.2009.2027995-
dc.identifier.scopusid2-s2.0-73249128806-
dc.identifier.wosid000273089500001-
dc.identifier.bibliographicCitationIEEE Transactions on Magnetics, v.46, no.1, pp 7 - 9-
dc.citation.titleIEEE Transactions on Magnetics-
dc.citation.volume46-
dc.citation.number1-
dc.citation.startPage7-
dc.citation.endPage9-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusACCUMULATION-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorDouble magnetic tunnel junctions-
dc.subject.keywordAuthormagnetic devices-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/5357509-
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