Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers
DC Field | Value | Language |
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dc.contributor.author | Seo, Ki Bong | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Han, Seung Jong | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | You, Hee-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-12-20T19:18:35Z | - |
dc.date.available | 2022-12-20T19:18:35Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175576 | - |
dc.description.abstract | Nonvolatile memory devices using the WSi2 nanocrystals on variable oxide thickness tunnel barrier composed of SiO2/Si3N4/SiO2 (ONO) layers were fabricated and their electrical properties were evaluated. The WSi2 nanocrystals with diameter of 2.5 nm and density of 3.6 x 10(12) cm(-2) were formed by using radio-frequency magnetron sputtering in the argon ambient and post-annealing process. In the device with 7-nm-thick ONO tunnel barrier, the threshold voltage shifts due to the memory effect of nanocrystals were observed about 1.6 V under +8 V/-10 V program/erase (P/E) voltages for 500 ms and maintained about 1.0 V after 10(6) s. The P/E speeds of this device were 100 ms with 1.0 V memory window. These results indicate that the ONO tunnel barrier with 7-nm-thickness provides an effective tunneling thickness for the fast P/E speeds and comparative physical thickness for long charge retention characteristic in nonvolatile memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.cap.2009.12.002 | - |
dc.identifier.scopusid | 2-s2.0-77649232468 | - |
dc.identifier.wosid | 000278635400003 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.1, pp.E5 - E8 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E5 | - |
dc.citation.endPage | E8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | POLYIMIDE | - |
dc.subject.keywordAuthor | WSi2 | - |
dc.subject.keywordAuthor | Nanocrystals | - |
dc.subject.keywordAuthor | Engineered tunnel barrier | - |
dc.subject.keywordAuthor | Nonvolatile memory device | - |
dc.subject.keywordAuthor | VARIOT | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173909005896?via%3Dihub | - |
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