Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers
- Authors
- Seo, Ki Bong; Lee, Dong Uk; Han, Seung Jong; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju
- Issue Date
- Jan-2010
- Publisher
- ELSEVIER
- Keywords
- WSi2; Nanocrystals; Engineered tunnel barrier; Nonvolatile memory device; VARIOT
- Citation
- CURRENT APPLIED PHYSICS, v.10, no.1, pp.E5 - E8
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 10
- Number
- 1
- Start Page
- E5
- End Page
- E8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175576
- DOI
- 10.1016/j.cap.2009.12.002
- ISSN
- 1567-1739
- Abstract
- Nonvolatile memory devices using the WSi2 nanocrystals on variable oxide thickness tunnel barrier composed of SiO2/Si3N4/SiO2 (ONO) layers were fabricated and their electrical properties were evaluated. The WSi2 nanocrystals with diameter of 2.5 nm and density of 3.6 x 10(12) cm(-2) were formed by using radio-frequency magnetron sputtering in the argon ambient and post-annealing process. In the device with 7-nm-thick ONO tunnel barrier, the threshold voltage shifts due to the memory effect of nanocrystals were observed about 1.6 V under +8 V/-10 V program/erase (P/E) voltages for 500 ms and maintained about 1.0 V after 10(6) s. The P/E speeds of this device were 100 ms with 1.0 V memory window. These results indicate that the ONO tunnel barrier with 7-nm-thickness provides an effective tunneling thickness for the fast P/E speeds and comparative physical thickness for long charge retention characteristic in nonvolatile memory devices.
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