Nonvolatile memory characteristics of small-molecule memory cells with electron-transport and hole-transport bilayers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nam, Woo-Sik | - |
dc.contributor.author | Seo, Sung-Ho | - |
dc.contributor.author | Park, Kwang-Hee | - |
dc.contributor.author | Hong, Seok-Hoon | - |
dc.contributor.author | Lee, Gon-Sub | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-12-20T19:18:45Z | - |
dc.date.available | 2022-12-20T19:18:45Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175578 | - |
dc.description.abstract | We investigated the effect of small-molecule electron-transport (Alq(3)) and hole-transport (alpha-NPD) bilayers on the nonvolatile memory characteristics of small-molecule memory cells embedded with Ni nanocrystals. With increasing thickness of the hole-transport layer, the on-state current (I-on) and memory margin (I-on/I-off ratio) decreased, the retention time decreased, and the standard deviation of I-on and I-off during erase-and-program cycles increased. These results indicate that the N,N'-bis (1-naphthalene)-1,1'biphenyl4,4 '' diamine layer in small-molecule-bilayer memory cells behaves as an electron-transport layer rather a hole-transport layer and that the dominant carriers in those memory cells are electrons rather than holes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Nonvolatile memory characteristics of small-molecule memory cells with electron-transport and hole-transport bilayers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1016/j.cap.2009.12.009 | - |
dc.identifier.scopusid | 2-s2.0-77949267106 | - |
dc.identifier.wosid | 000278635400010 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.1, pp.E37 - E41 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E37 | - |
dc.citation.endPage | E41 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | BISTABLE DEVICES | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | ELEMENTS | - |
dc.subject.keywordAuthor | Small-molecule organic | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Nanocrystal | - |
dc.subject.keywordAuthor | Multi-level | - |
dc.subject.keywordAuthor | Dominant carrier | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173909005963?via%3Dihub | - |
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