TiN electrode-induced bipolar resistive switching of TiO2 thin films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Do, Young Ho | - |
dc.contributor.author | Kwak, June Sik | - |
dc.contributor.author | Bae, Yoon Cheol | - |
dc.contributor.author | Lee, Jong Hyun | - |
dc.contributor.author | Kim, Yongmin | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-12-20T19:19:00Z | - |
dc.date.available | 2022-12-20T19:19:00Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175581 | - |
dc.description.abstract | The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular forming process were studied using two different top or bottom TiN electrodes (Sample A: top TiN/TiO2/Pt, Sample B: Pt/TiO2/TiN bottom). The sample A and B clearly showed two different switching directions of counter-clockwise (CCW) and clockwise (CW) bipolar switching behaviors, respectively, depending on the relative position of the TiN electrode. These switching characteristics in both samples could be understood by considering the forming and rupture of the conducting path due to the migration of oxygen ions between the TiO2 layer and the TiN electrode, which acts like the oxygen reservoir. In addition, both samples clearly display high reliable memory switching characteristics, such as stable switching speed (mu s), endurance behaviors (>10(4)), and long retention times (>10(4) s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | TiN electrode-induced bipolar resistive switching of TiO2 thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1016/j.cap.2009.12.017 | - |
dc.identifier.scopusid | 2-s2.0-77649234132 | - |
dc.identifier.wosid | 000278635400018 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.1, pp.E71 - E74 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E71 | - |
dc.citation.endPage | E74 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Oxygen | - |
dc.subject.keywordPlus | Platinum | - |
dc.subject.keywordPlus | Switching systems | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Titanium nitride | - |
dc.subject.keywordPlus | Clock wise | - |
dc.subject.keywordPlus | Conducting paths | - |
dc.subject.keywordPlus | Counter-clockwise | - |
dc.subject.keywordPlus | Forming process | - |
dc.subject.keywordPlus | High reliable | - |
dc.subject.keywordPlus | Memory switching | - |
dc.subject.keywordPlus | Non-volatile memories | - |
dc.subject.keywordPlus | Oxygen ions | - |
dc.subject.keywordPlus | Oxygen reservoir | - |
dc.subject.keywordPlus | Polycrystalline | - |
dc.subject.keywordPlus | Relative positions | - |
dc.subject.keywordPlus | Resistive switching | - |
dc.subject.keywordPlus | Retention time | - |
dc.subject.keywordPlus | Switching behaviors | - |
dc.subject.keywordPlus | Switching characteristics | - |
dc.subject.keywordPlus | Switching speed | - |
dc.subject.keywordPlus | TiN electrodes | - |
dc.subject.keywordPlus | TiO | - |
dc.subject.keywordPlus | Switching | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S156717390900604X?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.