Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sejoon | - |
dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Kim, Deuk Young | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.date.accessioned | 2022-12-20T19:25:58Z | - |
dc.date.available | 2022-12-20T19:25:58Z | - |
dc.date.created | 2022-08-27 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175608 | - |
dc.description.abstract | Enhanced ferromagnetism was observed from the H2O2-treated p-type (Zn0.93Mn0.07)O:As layer. Compared with the untreated sample, the H2O2-treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T-C similar to 280 K), the H2O2-treated sample exhibited to have the increased T-C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H2O2-treated sample. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong S. | - |
dc.identifier.doi | 10.1063/1.3294635 | - |
dc.identifier.scopusid | 2-s2.0-75749143139 | - |
dc.identifier.wosid | 000274179900046 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.96, no.4, pp.1 - 3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 96 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | OXIDE FILMS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | SPINTRONICS | - |
dc.subject.keywordPlus | EXCHANGE | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | arsenic | - |
dc.subject.keywordAuthor | Curie temperature | - |
dc.subject.keywordAuthor | deep levels | - |
dc.subject.keywordAuthor | dilute magnetic materials | - |
dc.subject.keywordAuthor | ferromagnetic materials | - |
dc.subject.keywordAuthor | g-factor | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | impurity states | - |
dc.subject.keywordAuthor | magnetic hysteresis | - |
dc.subject.keywordAuthor | magnetic semiconductors | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3294635 | - |
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