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Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer

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dc.contributor.authorLee, Sejoon-
dc.contributor.authorShon, Yoon-
dc.contributor.authorKim, Deuk Young-
dc.contributor.authorKang, Tae Won-
dc.contributor.authorYoon, Chong S.-
dc.date.accessioned2022-12-20T19:25:58Z-
dc.date.available2022-12-20T19:25:58Z-
dc.date.created2022-08-27-
dc.date.issued2010-01-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175608-
dc.description.abstractEnhanced ferromagnetism was observed from the H2O2-treated p-type (Zn0.93Mn0.07)O:As layer. Compared with the untreated sample, the H2O2-treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T-C similar to 280 K), the H2O2-treated sample exhibited to have the increased T-C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H2O2-treated sample.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleEnhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorYoon, Chong S.-
dc.identifier.doi10.1063/1.3294635-
dc.identifier.scopusid2-s2.0-75749143139-
dc.identifier.wosid000274179900046-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.96, no.4, pp.1 - 3-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume96-
dc.citation.number4-
dc.citation.startPage1-
dc.citation.endPage3-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusOXIDE FILMS-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusSPINTRONICS-
dc.subject.keywordPlusEXCHANGE-
dc.subject.keywordPlusORIGIN-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordAuthorarsenic-
dc.subject.keywordAuthorCurie temperature-
dc.subject.keywordAuthordeep levels-
dc.subject.keywordAuthordilute magnetic materials-
dc.subject.keywordAuthorferromagnetic materials-
dc.subject.keywordAuthorg-factor-
dc.subject.keywordAuthorII-VI semiconductors-
dc.subject.keywordAuthorimpurity states-
dc.subject.keywordAuthormagnetic hysteresis-
dc.subject.keywordAuthormagnetic semiconductors-
dc.subject.keywordAuthorwide band gap semiconductors-
dc.subject.keywordAuthorzinc compounds-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.3294635-
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