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Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer
- Issue Date
- Jan-2010
- Publisher
- American Institute of Physics
- Keywords
- arsenic; Curie temperature; deep levels; dilute magnetic materials; ferromagnetic materials; g-factor; II-VI semiconductors; impurity states; magnetic hysteresis; magnetic semiconductors; wide band gap semiconductors; zinc compounds
- Citation
- Applied Physics Letters, v.96, no.4, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 96
- Number
- 4
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Enhanced ferromagnetism was observed from the H2O2-treated p-type (Zn0.93Mn0.07)O:As layer. Compared with the untreated sample, the H2O2-treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T-C similar to 280 K), the H2O2-treated sample exhibited to have the increased T-C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H2O2-treated sample.
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Related Researcher
- Yoon, Chong Seung
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)