Effect of ozone concentration on atomic layer deposited HfO2 on Si
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, K.J. | - |
dc.contributor.author | Park, T.J. | - |
dc.contributor.author | Sivasubramani, P. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Ahn, J. | - |
dc.date.accessioned | 2022-12-20T19:26:48Z | - |
dc.date.available | 2022-12-20T19:26:48Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175615 | - |
dc.description.abstract | Effect of ozone concentration (200-400 g/Nm3) on atomic layer deposition of HfO2 thin films on Si wafers using tetrakis (dimethylamino)hafhium (TDMAHf) as Hf precursor was systematically studied. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses show that oxidation of the Si substrate enhances with ozone concentration which leads to an increase in interfacial layer (TL) thickness between the high-k dielectric and the substrate. The relatively thicker IL successfully suppresses additional growth of itself and Si out-diffusion into the dielectric during post deposition annealing (PDA). Corresponding electrical characteristics such as capacitance-voltage, leakage current density and time zero dielectric breakdown display significant improvement for HfO2 film prepared using higher ozone concentration after PDA. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.title | Effect of ozone concentration on atomic layer deposited HfO2 on Si | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, J. | - |
dc.identifier.doi | 10.1149/1.3375604 | - |
dc.identifier.scopusid | 2-s2.0-78650562902 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.28, no.1, pp.221 - 226 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 28 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 221 | - |
dc.citation.endPage | 226 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Atomic layer deposited | - |
dc.subject.keywordPlus | Capacitance voltage | - |
dc.subject.keywordPlus | Electrical characteristic | - |
dc.subject.keywordPlus | High-k dielectric | - |
dc.subject.keywordPlus | Interfacial layer | - |
dc.subject.keywordPlus | Out-diffusion | - |
dc.subject.keywordPlus | Ozone concentration | - |
dc.subject.keywordPlus | Post deposition annealing | - |
dc.subject.keywordPlus | Si substrates | - |
dc.subject.keywordPlus | Si wafer | - |
dc.subject.keywordPlus | Tetrakis | - |
dc.subject.keywordPlus | Time-zero dielectric breakdowns | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Concentration (process) | - |
dc.subject.keywordPlus | Current voltage characteristics | - |
dc.subject.keywordPlus | Hafnium | - |
dc.subject.keywordPlus | Hafnium compounds | - |
dc.subject.keywordPlus | High resolution transmission electron microscopy | - |
dc.subject.keywordPlus | Leakage currents | - |
dc.subject.keywordPlus | Logic gates | - |
dc.subject.keywordPlus | Ozone | - |
dc.subject.keywordPlus | Ozone layer | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Semiconducting silicon compounds | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3375604 | - |
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