Dependence of SOI properties on memory characteristics in a cap-less memory cell

Abstract

The material properties of silicon-on-insulator substrate affecting memory characteristics in Cap-less memory cells such as the top silicon thickness, boron concentration, and strain in the channel was investigated to obtain higher memory margin. We demonstrated that the memory margin was maximized at a specific top thickness and boron concentration, i.e., it was enhanced by 3.38 times at the top silicon thickness of 46.9 nm, compared with that at 15.5 nm, and also enhanced by 1.83 times at a boron concentration of 1.4 × 10 17 cm-3. Particularly, it was enhanced by 2.13 times with a bi- axial tensile strained channel.