Retention Characteristics of Nano-Floating Gate Capacitor with SiC Nano-Particles
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-12-20T19:44:10Z | - |
dc.date.available | 2022-12-20T19:44:10Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175741 | - |
dc.description.abstract | A nano-floating gate capacitor with SiC nano-particles embedded in a SiO2 layer was fabricated and its electrical properties such as the capacitance-voltage hysteresis curve at various temperature, and the retention were characterized. The SiC nano-particles in the SiO2 layer were formed by magnetron sputtering of SiC and SiO2 targets and post-annealing at 900 degrees C for 3 min. They had a spherical shape with an average diameter of 3 similar to 5 nm and were distributed between the tunnel oxide and the control oxide layers. For the nano-floating gate capacitor with SiC nano-particles embedded in a SiO2 layer; the flat-band voltage shift decreased from 2.2 V at 25 degrees C to about 1.6 V at 85 degrees C and 0.6 V at 1.25 degrees C, when the gate voltages were swept from -8 V to 8 V. Also, the memory window under the programming/erasing operation at +12 V and -12 V for 700 ms appeared to be approximately 0.54 V at 25 degrees C 0.61 V at 85 degrees C and 0.22 V at 125 degrees C after 1 hr. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Retention Characteristics of Nano-Floating Gate Capacitor with SiC Nano-Particles | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.55.2667 | - |
dc.identifier.scopusid | 2-s2.0-76249084902 | - |
dc.identifier.wosid | 000272877800012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp.2667 - 2670 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2667 | - |
dc.citation.endPage | 2670 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001429222 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERIZATION | - |
dc.subject.keywordAuthor | SiC nano-particle | - |
dc.subject.keywordAuthor | Nano-floating gate memory | - |
dc.subject.keywordAuthor | Nonvolatile | - |
dc.subject.keywordAuthor | Retention time | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=55&number=6(1)&spage=2667&year=2009 | - |
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