Retention Characteristics of Nano-Floating Gate Capacitor with SiC Nano-Particles
- Authors
- Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu
- Issue Date
- Dec-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SiC nano-particle; Nano-floating gate memory; Nonvolatile; Retention time
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp.2667 - 2670
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 6
- Start Page
- 2667
- End Page
- 2670
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175741
- DOI
- 10.3938/jkps.55.2667
- ISSN
- 0374-4884
- Abstract
- A nano-floating gate capacitor with SiC nano-particles embedded in a SiO2 layer was fabricated and its electrical properties such as the capacitance-voltage hysteresis curve at various temperature, and the retention were characterized. The SiC nano-particles in the SiO2 layer were formed by magnetron sputtering of SiC and SiO2 targets and post-annealing at 900 degrees C for 3 min. They had a spherical shape with an average diameter of 3 similar to 5 nm and were distributed between the tunnel oxide and the control oxide layers. For the nano-floating gate capacitor with SiC nano-particles embedded in a SiO2 layer; the flat-band voltage shift decreased from 2.2 V at 25 degrees C to about 1.6 V at 85 degrees C and 0.6 V at 1.25 degrees C, when the gate voltages were swept from -8 V to 8 V. Also, the memory window under the programming/erasing operation at +12 V and -12 V for 700 ms appeared to be approximately 0.54 V at 25 degrees C 0.61 V at 85 degrees C and 0.22 V at 125 degrees C after 1 hr.
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