Analysis of Layers and Interfaces in a Multi-Layer System and Schematic Simulation Using Angle-Resolved X-ray Photoelectron Spectroscopy

Abstract

Standardization of an analytical procedure for bonding structure and thickness simulation of nanoscaled ultra thin films was established using the theoretical background of angle-resolved X-ray photoelectron spectroscopy (ARXPS). A structure simulation using ARXPS was designed and a software program with java language was provided for application to a high-k dielectric multilayer system. A thickness simulation was applied to a high-k dielectric layer on semiconductor system of about 2-3 nm Gd2O3/GaAs and compared to experimental results. Multilayer structure of high-k binary oxide system (HfO2 and Al2O3) was simulated by photoelectron flux ratio change and their multilayer stacking structures were analyzed with different each layer thickness.