Analysis of Layers and Interfaces in a Multi-Layer System and Schematic Simulation Using Angle-Resolved X-ray Photoelectron Spectroscopy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sun Gyu | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Chang, Ho Jung | - |
dc.date.accessioned | 2022-12-20T20:17:48Z | - |
dc.date.available | 2022-12-20T20:17:48Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-11 | - |
dc.identifier.issn | 1546-1955 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175930 | - |
dc.description.abstract | Standardization of an analytical procedure for bonding structure and thickness simulation of nanoscaled ultra thin films was established using the theoretical background of angle-resolved X-ray photoelectron spectroscopy (ARXPS). A structure simulation using ARXPS was designed and a software program with java language was provided for application to a high-k dielectric multilayer system. A thickness simulation was applied to a high-k dielectric layer on semiconductor system of about 2-3 nm Gd2O3/GaAs and compared to experimental results. Multilayer structure of high-k binary oxide system (HfO2 and Al2O3) was simulated by photoelectron flux ratio change and their multilayer stacking structures were analyzed with different each layer thickness. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Analysis of Layers and Interfaces in a Multi-Layer System and Schematic Simulation Using Angle-Resolved X-ray Photoelectron Spectroscopy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1166/jctn.2009.1295 | - |
dc.identifier.scopusid | 2-s2.0-75349114185 | - |
dc.identifier.wosid | 000273984700006 | - |
dc.identifier.bibliographicCitation | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, v.6, no.11, pp.2398 - 2401 | - |
dc.relation.isPartOf | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | - |
dc.citation.title | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | - |
dc.citation.volume | 6 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2398 | - |
dc.citation.endPage | 2401 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Computer simulation languages | - |
dc.subject.keywordPlus | Computer software | - |
dc.subject.keywordPlus | Film preparation | - |
dc.subject.keywordPlus | Film thickness | - |
dc.subject.keywordPlus | Gadolinium | - |
dc.subject.keywordPlus | Hafnium compounds | - |
dc.subject.keywordPlus | Java programming language | - |
dc.subject.keywordPlus | Multilayers | - |
dc.subject.keywordPlus | Photoelectricity | - |
dc.subject.keywordPlus | Photoionization | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Thin film devices | - |
dc.subject.keywordPlus | Analytical procedure | - |
dc.subject.keywordPlus | Angle resolved x ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | ARXPS | - |
dc.subject.keywordPlus | Binary oxide systems | - |
dc.subject.keywordPlus | Bonding structure | - |
dc.subject.keywordPlus | Flux ratio | - |
dc.subject.keywordPlus | GaAs | - |
dc.subject.keywordPlus | High-k | - |
dc.subject.keywordPlus | High-k dielectric | - |
dc.subject.keywordPlus | High-k dielectric layers | - |
dc.subject.keywordPlus | Java language | - |
dc.subject.keywordPlus | Layer thickness | - |
dc.subject.keywordPlus | Multi-layer system | - |
dc.subject.keywordPlus | Multilayer stacking | - |
dc.subject.keywordPlus | Multilayer structures | - |
dc.subject.keywordPlus | Nanoscaled | - |
dc.subject.keywordPlus | Schematic simulation | - |
dc.subject.keywordPlus | Semiconductor systems | - |
dc.subject.keywordPlus | Software program | - |
dc.subject.keywordPlus | Structure simulations | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordAuthor | ARXPS | - |
dc.subject.keywordAuthor | High-k | - |
dc.subject.keywordAuthor | Thin Film | - |
dc.subject.keywordAuthor | Multilayer | - |
dc.subject.keywordAuthor | Thickness | - |
dc.subject.keywordAuthor | Simulation | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jctn/2009/00000006/00000011/art00006;jsessionid=3310g7hg4j2t.x-ic-live-01 | - |
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