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Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Il-Jae | - |
| dc.contributor.author | Min, Byoung-Chul | - |
| dc.contributor.author | Hong, Jin Pyo | - |
| dc.contributor.author | Shin, Kyung-Ho | - |
| dc.date.accessioned | 2022-12-20T20:23:44Z | - |
| dc.date.available | 2022-12-20T20:23:44Z | - |
| dc.date.issued | 2009-11 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175972 | - |
| dc.description.abstract | We study the effect of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by high-temperature in situ annealing above 400 degrees C, circumventing Mn diffusion conventionally caused by postannealing process. The high temperature in situ annealing leads to Ru diffusion at the CoFeB/Ru interfaces, and thereby results in a reduction in tunnel magnetoresistance (TMR). The minimization of Ru diffusion during the in situ annealing provides a large TMR of 294% at room temperature with an exchange-bias field of 280 Oe. In addition, the temperature and voltage dependence of TMR reveals that there is neither significant spin-exchange scattering nor severe impurity-assisted scattering in the MgO barrier. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.3268791 | - |
| dc.identifier.scopusid | 2-s2.0-71949130388 | - |
| dc.identifier.wosid | 000272627600039 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.95, no.22, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 95 | - |
| dc.citation.number | 22 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MAGNETORESISTANCE | - |
| dc.subject.keywordAuthor | diffusion | - |
| dc.subject.keywordAuthor | high-temperature effects | - |
| dc.subject.keywordAuthor | impurity scattering | - |
| dc.subject.keywordAuthor | magnesium compounds | - |
| dc.subject.keywordAuthor | magnetic impurities | - |
| dc.subject.keywordAuthor | magnetic tunnelling | - |
| dc.subject.keywordAuthor | ruthenium | - |
| dc.subject.keywordAuthor | tunnelling magnetoresistance | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3268791 | - |
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