Nonvolatile Unipolar and Bipolar Resistive Switching Characteristics in Co-doped TiO2 Thin Films with Different Compliance Currents
DC Field | Value | Language |
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dc.contributor.author | Do, Young Ho | - |
dc.contributor.author | Kwak, June Sik | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Park, Bae Ho | - |
dc.date.accessioned | 2022-12-20T21:02:00Z | - |
dc.date.available | 2022-12-20T21:02:00Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176274 | - |
dc.description.abstract | The resistive switching behavior of 100nmthick Co-doped TiO2 thin films grown by using a conventional rf magnetron sputtering system was investigated by using structural and electrical measurements The Co-doped TiO2 thin films dispaly a rutile phase and a column-like structure. An unusual result, a switching transition from a unipolar to a bipolar behavior, was clearly observed at a high compliance current. The experimental results suggest that the switching transition is related to the formation of trap sites (CoOx, TiO2-x, and Co-x-Ti1-xO2) under large electrical stress conditions. The improved reproducible switching properties of our Co-doped TiO2 materials under forward and reverse bias stresses demonstrate the possibility of future non-volatile memory elements. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Nonvolatile Unipolar and Bipolar Resistive Switching Characteristics in Co-doped TiO2 Thin Films with Different Compliance Currents | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.3938/jkps.55.1009 | - |
dc.identifier.wosid | 000269886300018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1009 - 1012 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1009 | - |
dc.citation.endPage | 1012 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001497405 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Bipolar switching | - |
dc.subject.keywordAuthor | Co-doped TiO2 | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=11113&vmd=Full | - |
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