Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition
DC Field | Value | Language |
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dc.contributor.author | Kim, Un Jeong | - |
dc.contributor.author | Park, Wanjun | - |
dc.date.accessioned | 2022-12-20T21:14:19Z | - |
dc.date.available | 2022-12-20T21:14:19Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176294 | - |
dc.description.abstract | The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L-c = 2-10 mu m were investigated. Randomly networked SWNTs were directly grown for the two different densities of rho similar to 25 mu m(-2) and rho similar to 50 mu m(-2) by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm(2) V-1 s(-1) for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Wanjun | - |
dc.identifier.doi | 10.1088/0022-3727/42/17/175106 | - |
dc.identifier.scopusid | 2-s2.0-70149103747 | - |
dc.identifier.wosid | 000269199200014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.17, pp.1 - 5 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 42 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Carbon nanotubes | - |
dc.subject.keywordPlus | Plasma deposition | - |
dc.subject.keywordPlus | Plasma diagnostics | - |
dc.subject.keywordPlus | Plasma enhanced chemical vapor deposition | - |
dc.subject.keywordPlus | Plasmas | - |
dc.subject.keywordPlus | Single-walled carbon nanotubes (SWCN) | - |
dc.subject.keywordPlus | Transport properties | - |
dc.subject.keywordPlus | Water vapor | - |
dc.subject.keywordPlus | Channel length | - |
dc.subject.keywordPlus | Current paths | - |
dc.subject.keywordPlus | Field effect transport | - |
dc.subject.keywordPlus | Field-effect mobilities | - |
dc.subject.keywordPlus | Linear dependence | - |
dc.subject.keywordPlus | Nanotube density | - |
dc.subject.keywordPlus | Nanotube transistors | - |
dc.subject.keywordPlus | Plasma enhanced chemical vapour deposition | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0022-3727/42/17/175106 | - |
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