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Molecular dynamics simulation of the thin film deposition of Co/Cu(111) with Pb surfactant

Authors
Kim, Byung-HyunChung, Yong-Chae
Issue Date
Aug-2009
Publisher
AIP Publishing
Citation
JOURNAL OF APPLIED PHYSICS, v.106, no.4, pp.1 - 3
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
106
Number
4
Start Page
1
End Page
3
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176447
DOI
10.1063/1.3194309
ISSN
0021-8979
Abstract
Using molecular dynamics simulation, the effect of Pb surfactant for the thin film growth of Co atoms on Cu(111) substrate was investigated. Specifically, the behavior of Co atoms being deposited on Cu(111) substrate with predeposited Pb layer was extensively investigated and compared with the case of without Pb layer to explain the effect of Pb surfactant.. It was observed that Pb layer was floating during the Co deposition. It was, quantitatively, found that Pb surfactant played an important role in suppression of active diffusion of Co atoms, which was accomplished by the increase in the surface diffusion barrier energy. The energy change in the deposited Co adatom on the Cu(111) substrate with predeposited Pb layer showed that the approaching Co adatom penetrated into the Pb layer; then, the Co adatom settled down on the Cu(111) substrate. Consequently, Pb atoms around Co adatom suppressed the further diffusion of Co adatom.
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