SiC nano-particles application to nano-floating gate memory

Abstract

Nonvolatile memory device with the multi-layered SiC nano-particles embedded in SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nano-particles were formed by using radio-frequency magnetron sputtering in the argon ambient and post thermal annealing process of SiC film. High-resolution transmission electron microscope analysis showed the multi-layer of SiC nano-particles between tunnel oxide and control oxide layers. The average size and density of the SiC nano-particles were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layer of SiC nano-particles to define programming and erasing state were about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.