SiC nano-particles application to nano-floating gate memory
- Authors
- Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu; Shin, Jin-Wook; Cho, Won-Ju
- Issue Date
- Jul-2009
- Publisher
- AIP Publishing
- Citation
- AIP Conference Proceedings, v.1199, pp.509 - 510
- Indexed
- SCOPUS
- Journal Title
- AIP Conference Proceedings
- Volume
- 1199
- Start Page
- 509
- End Page
- 510
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176475
- DOI
- 10.1063/1.3295531
- ISSN
- 0094-243X
- Abstract
- Nonvolatile memory device with the multi-layered SiC nano-particles embedded in SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nano-particles were formed by using radio-frequency magnetron sputtering in the argon ambient and post thermal annealing process of SiC film. High-resolution transmission electron microscope analysis showed the multi-layer of SiC nano-particles between tunnel oxide and control oxide layers. The average size and density of the SiC nano-particles were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layer of SiC nano-particles to define programming and erasing state were about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.
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