Fabrication and electrical characterization of metal-silicide nanocrystals for nano-floating gate nonvolatile memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Seung Jong | - |
dc.contributor.author | Seo, Ki Bong | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Oh, Se-Mam | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.date.accessioned | 2022-12-20T21:34:40Z | - |
dc.date.available | 2022-12-20T21:34:40Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176500 | - |
dc.description.abstract | We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi 2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Materials Research Society | - |
dc.title | Fabrication and electrical characterization of metal-silicide nanocrystals for nano-floating gate nonvolatile memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1557/proc-1160-h04-02 | - |
dc.identifier.scopusid | 2-s2.0-77649141288 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.1160, pp.49 - 53 | - |
dc.relation.isPartOf | Materials Research Society Symposium Proceedings | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 1160 | - |
dc.citation.startPage | 49 | - |
dc.citation.endPage | 53 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Capacitance | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | Gate dielectrics | - |
dc.subject.keywordPlus | High resolution transmission electron microscopy | - |
dc.subject.keywordPlus | Nanocrystals | - |
dc.subject.keywordPlus | Silicides | - |
dc.subject.keywordPlus | Average diameter | - |
dc.subject.keywordPlus | Capacitance voltage | - |
dc.subject.keywordPlus | Electrical characterization | - |
dc.subject.keywordPlus | Flat-band voltage shift | - |
dc.subject.keywordPlus | Hysteresis curve | - |
dc.subject.keywordPlus | Nanofloating gate memory | - |
dc.subject.keywordPlus | Non-volatile memory | - |
dc.subject.keywordPlus | Thermal annealing system | - |
dc.subject.keywordPlus | Titanium compounds | - |
dc.identifier.url | https://link.springer.com/article/10.1557/PROC-1160-H04-02 | - |
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