Fabrication and electrical characterization of metal-silicide nanocrystals for nano-floating gate nonvolatile memory
- Authors
- Han, Seung Jong; Seo, Ki Bong; Lee, Dong Uk; Kim, Eun Kyu; Oh, Se-Mam; Cho, Won-Ju
- Issue Date
- Jul-2009
- Publisher
- Materials Research Society
- Citation
- Materials Research Society Symposium Proceedings, v.1160, pp.49 - 53
- Indexed
- SCOPUS
- Journal Title
- Materials Research Society Symposium Proceedings
- Volume
- 1160
- Start Page
- 49
- End Page
- 53
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176500
- DOI
- 10.1557/proc-1160-h04-02
- ISSN
- 0272-9172
- Abstract
- We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi 2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.
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