Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jin Soak | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Kim, Jun Oh | - |
dc.contributor.author | Lee, Sang Jun | - |
dc.contributor.author | Noh, Sam Kyu | - |
dc.date.accessioned | 2022-12-20T21:37:38Z | - |
dc.date.available | 2022-12-20T21:37:38Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176523 | - |
dc.description.abstract | The carrier trapping and emission processes of InAs self-assembled quantum dots (QDs) on GaAs substrates were measured and analyzed using capacitance-voltage techniques and deep-level transient spectroscopy (DLTS). We used different applied biases and filling pulse widths. This allowed the determination of the activation energies of defect/electronic states of the QDs within a range of 0.08-0.59 eV. These values represent the energy levels of the QDs with respect to the host matrix, showing that QDs have band-like interacting energy levels and that DLTS signals are largely affected by the electron density of states of QDs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.title | Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.spmi.2009.01.011 | - |
dc.identifier.scopusid | 2-s2.0-67249121759 | - |
dc.identifier.wosid | 000267444900054 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.46, no.1-2, pp.312 - 317 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 46 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 312 | - |
dc.citation.endPage | 317 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordAuthor | Quantum dot | - |
dc.subject.keywordAuthor | InAs/GaAs | - |
dc.subject.keywordAuthor | Filling pulse width | - |
dc.subject.keywordAuthor | Deep level transient spectroscopy | - |
dc.subject.keywordAuthor | Capacitance-voltage | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0749603609000068?via%3Dihub | - |
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