Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements
- Authors
- Kim, Jin Soak; Kim, Eun Kyu; Kim, Jun Oh; Lee, Sang Jun; Noh, Sam Kyu
- Issue Date
- Jul-2009
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Quantum dot; InAs/GaAs; Filling pulse width; Deep level transient spectroscopy; Capacitance-voltage
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.46, no.1-2, pp.312 - 317
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 46
- Number
- 1-2
- Start Page
- 312
- End Page
- 317
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176523
- DOI
- 10.1016/j.spmi.2009.01.011
- ISSN
- 0749-6036
- Abstract
- The carrier trapping and emission processes of InAs self-assembled quantum dots (QDs) on GaAs substrates were measured and analyzed using capacitance-voltage techniques and deep-level transient spectroscopy (DLTS). We used different applied biases and filling pulse widths. This allowed the determination of the activation energies of defect/electronic states of the QDs within a range of 0.08-0.59 eV. These values represent the energy levels of the QDs with respect to the host matrix, showing that QDs have band-like interacting energy levels and that DLTS signals are largely affected by the electron density of states of QDs.
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