Electrical characterization of nonvolatile memory with SnO2 nano-particle in polyimide dielectric layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Han, Seung Joung | - |
dc.contributor.author | Seo, Ki Bong | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Shin, Jin-Wook | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.date.accessioned | 2022-12-20T21:37:51Z | - |
dc.date.available | 2022-12-20T21:37:51Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176525 | - |
dc.description.abstract | The NFGM devices with SnO2 nano-particles on the p-type (100) silion-on-insulator wafers were fabricated and we analyzed the electrical characteristics such as subthreshold, threshold voltage shift and retention properties. The self-assembled SnO2 nanoparticles were created by chemical reaction between the polymer layers and 5-nm-thick Sn films. The SnO2 nano-particles had spherical shape with an average diameter of 15 nm and the particle density was 2.4 x 10(11) cm(-2). The electrons were charged into SnO2 nano-particles through SiO2 tunneling layer from channel of NFGM by using Fowler-Nordheim tunneling method. The memory windows of the fabricated NFGM maintained at 0.5 V after 10(3) S. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.title | Electrical characterization of nonvolatile memory with SnO2 nano-particle in polyimide dielectric layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.1016/j.spmi.2009.01.002 | - |
dc.identifier.scopusid | 2-s2.0-67249155711 | - |
dc.identifier.wosid | 000267444900032 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.46, no.1-2, pp.176 - 181 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 46 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 176 | - |
dc.citation.endPage | 181 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | SnO2 | - |
dc.subject.keywordAuthor | Nano-particles | - |
dc.subject.keywordAuthor | Polyimide | - |
dc.subject.keywordAuthor | NFGM | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0749603609000044?via%3Dihub | - |
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